Quantum cascade laser design with stepped well active region
US9548590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2012 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3407
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Included are embodiments of a quantum cascade laser structure. Some embodiments include a plurality of quantum wells and a plurality of barriers, at least a portion of which define an active region. In some embodiments, a photon is emitted in the active region when an electron transitions from an upper laser state in the active region to a lower laser state in the active region. Additionally, a final quantum well in the plurality of quantum wells may define the active region, where the final quantum well extends below an adjacent quantum well in the active region. Similarly, the final quantum well may include a thickness that is less than a thickness of the adjacent quantum well in the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.