High performance radio frequency switch
US9548731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2016 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Jun 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.