Scan driving circuit for oxide semiconductor thin film transistors
US9552790B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 6, 2015 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Aug 6, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/045
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a scan driving circuit for oxide semiconductor thin film transistors, a pull-down holding circuit part (600) employed of the circuit comprises a first pull-down holding module (601) and a second pull-down holding module (602) which is capable of extending the lifetime of the circuit; the first pull-down holding module (601) comprises a first main inverter and a first auxiliary inverter with introducing a constant low voltage level (DCL); the second pull-down holding module (602) comprises a second main inverter and a second auxiliary inverter with introducing a constant low voltage level (DCL); setting the constant low voltage level (DCL)<the second negative voltage level (VSS2)<the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part (600) can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at lo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.