Patent · US Active

Semiconductor device with through-substrate via covered by a solder ball and related method of production

US9553039B2 · kind B2 · utility

2Cited by

1References

6Claims

0Family size

Assignee

AMS AG · AT

Inventors

Cathal Cassidy · Okinawa, JP
Martin Schrems · Langenbruck, DE
Franz Schrank · Graz, AT

Key dates

Filing date	Nov 7, 2012
Grant date	Jan 24, 2017
Priority date	—
Expiry date	Jan 24, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/30101
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for three dimensional integration is offered by this scheme.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.