E-plane probe with stepped surface profile for high-frequency
US9553057B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1423
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A method of forming an E-plane probe includes forming a plurality of monolithically integrated circuits (MICs) on a wafer, each MIC including a monolithic microwave integrated circuit (MMIC), and an E-plane probe coupled to the MMIC, mounting the wafer on an ultra-violet (UV) tape, cutting the wafer with a laser at a first power and a first linear cutting speed along vertical streets and then along horizontal streets to form separate substrates, cutting with the laser at a second power and a second linear cutting speed a rectangle or a portion of a rectangle from the separate substrates to form narrow substrate extensions on the substrates, and repeating this step for each rectangle or portion of a rectangle to be cut to form substrate extensions, and curing the UV tape, wherein the E-plane probes are on the narrow substrate extensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.