Semiconductor device
US9553087B1 · kind B1 · utility
2Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2015 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Nov 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, a semiconductor device includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region having a first concentration, and a first gate. The second transistor includes a second source region in a second bulk region having a second concentration higher than the first concentration. The second source region is connected with the first source region and the first gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.