Semiconductor device
US9553101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2014 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Apr 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A semiconductor device may include gate structures spaced apart above a top surface of a substrate. The gate structures may include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation insulating layer may be disposed between the gate structures. A plurality of cell pillars may penetrate the horizontal electrode and connect to the substrate. The plurality of cell pillars may include a minimum spacing defined by a shortest distance between any two of the plurality of cell pillars. The thickness of the horizontal electrode may be greater than the minimum spacing of the cell pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.