Imaging detector having an integrated wide bandgap layer and method of manufacturing thereof

US9553116B2 · kind B2 · utility

Assignee

• TELEDYNE SCIENTIFIC & IMAGING, LLC · US

Inventors

• Donald L. Lee · Thousand Oaks, US
• Eric Piquette · Newbury Park, US
• Majid Zandian · Calabasas, US
• Paul H. Kobrin · Newbury Park, US
• Haluk Sankur · Ventura, US

Key dates

• Filing date: Jun 1, 2015
• Grant date: Jan 24, 2017
• Expiry date: Jun 1, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A substrate-removed, surface passivated, and anti-reflective (AR) coated detector assembly is provided. The assembly has an AR coating or passivation layer which includes a wide bandgap thin-film dielectric/passivation layer integrated therein. The wide bandgap thin-film dielectric/passivation layer is positioned proximal to a back interface of a substrate-removed detector assembly. A method of manufacturing the detector assembly includes etching a backside of a partially-removed-substrate detector assembly to obtain an etched detector assembly removed from a substrate. A wide bandgap layer is deposited, in a vacuum chamber, on the etched detector assembly without utilizing an adhesive layer. Additional anti-reflective coating layers are deposited, in the same vacuum chamber, on the wide bandgap layer to form an anti-reflective coating layer with the wide bandgap layer integrated therein. The wide bandgap layer is positioned proximal to an interface portion between the anti-reflective coating layer and the detector assembly.