Patent · US Active

Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip

US9553231B2 · kind B2 · utility

2Cited by

0References

14Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Tobias Meyer · Durham, US
Jürgen Off · Regensburg, DE

Key dates

Filing date	Apr 11, 2014
Grant date	Jan 24, 2017
Priority date	—
Expiry date	Apr 11, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/813
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N quantum wells with N≧2. At a first working point (W1) at a first current density, the quantum wells have a first emission wavelength and, at a second working point (W2) at a second current density, a second emission wavelength. At least two of the first emission wavelengths differ from one another and at least some of the second emission wavelengths differ from the first emission wavelengths. The first current density is smaller than the second current density and the current densities differ from one another at least by a factor of 2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.