Light emitter with a conductive transparent p-type layer structure
US9553232B2 · kind B2 · utility
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3References
12Claims
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Key dates
| Filing date | Feb 10, 2016 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Feb 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting device includes an n-type layer, a p-type layer structure, a layer of p-type nano-dots imbedded in the p-type layer structure, and an active region sandwiched between the n-type layer and the p-type layer structure, where the p-type nano-dots possess a sheet density of 1010 to 1012 cm−2, a lateral dimension of 2-20 nm, and a vertical dimension of 1-5 nm. The p-type layer structure with a layer of p-type nano-dots imbedded therein provides good vertical conductivity and UV transparency. Also provided is a method for making the light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.