Method of manufacturing light emitting element
US9553238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2015 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Nov 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.