Light emitting device and light emitting device package
US9553239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2014 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Mar 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light emitting device includes a first conductive-type semiconductor layer laminated on a substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer laminated at a side of the first conductive-type semiconductor layer opposite to the substrate; a second ITO layer laminated at a side of the second conductive-type semiconductor layer opposite to the substrate; a first metal layer laminated on the first ITO layer; and a second metal layer laminated on the second ITO layer. The first and second metal layers have the same structure and each includes a lower metal layer which contacts a corresponding ITO layer of the first ITO layer and the second ITO layer; and an upper metal layer laminated on the lower metal layer, the upper metal layer being thicker than the lower metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.