Patent · US Active

Light emitting device and light emitting device package

US9553239B2 · kind B2 · utility

0Cited by
3References
8Claims
0Family size

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Key dates

Filing dateFeb 5, 2014
Grant dateJan 24, 2017
Priority date
Expiry dateMar 25, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A light emitting device includes a first conductive-type semiconductor layer laminated on a substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer laminated at a side of the first conductive-type semiconductor layer opposite to the substrate; a second ITO layer laminated at a side of the second conductive-type semiconductor layer opposite to the substrate; a first metal layer laminated on the first ITO layer; and a second metal layer laminated on the second ITO layer. The first and second metal layers have the same structure and each includes a lower metal layer which contacts a corresponding ITO layer of the first ITO layer and the second ITO layer; and an upper metal layer laminated on the lower metal layer, the upper metal layer being thicker than the lower metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.