Patent · US Active

Method of making silicon anode material for rechargeable cells

US9553304B2 · kind B2 · utility

3Cited by

47References

29Claims

0Family size

Assignee

Nexeon Limited · GB

Inventor

Philip John Rayner · Huntingdon, GB

Key dates

Filing date	Jan 15, 2015
Grant date	Jan 24, 2017
Priority date	—
Expiry date	Jan 15, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/2982
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

There is provided a method of forming silicon anode material for rechargeable cells. The method includes providing a metal matrix, comprising no more than 30 wt % silicon, including silicon structures dispersed therein. The method further includes at least partially etching the metal matrix to at least partially isolate the silicon structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.