Multiband RF switch ground isolation
US9553550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21157
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.