Chemical deposition raw material formed of ruthenium complex and method for producing the same, and chemical deposition method
US9556212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2013 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Dec 26, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a raw material, formed of a ruthenium complex, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, wherein the ruthenium complex is a ruthenium complex represented by the following formula, in which carbonyl groups and a fluoroalkyl derivative of a polyene are coordinated to ruthenium. The present invention provides a raw material for chemical deposition having a preferable decomposition temperature, and the production cost therefor is low:(nR-L)Ru(CO)3 [Chemical Formula 1]
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.