Patent · US Active

Multilayer substrate and method for manufacturing the same

US9558859B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 18, 2014
Grant dateJan 31, 2017
Priority date
Expiry dateFeb 18, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/1291
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention provides a slip layer substrate which can reduce the thermal residual stresses between components induced by their mismatch of thermal expansion, thus greatly improve the reliability of electronic packages. The slip layer substrate comprises: a base material; a first metallization layer formed on the base material; a first diffusion barrier layer formed on the first metallization layer; a slip layer formed on the first diffusion barrier layer; a second diffusion barrier layer formed on the slip layer; and a second metallization layer formed on the second diffusion barrier layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.