Cold field electron emitters based on silicon carbide structures

US9558907B2 · kind B2 · utility

Assignees

• The United States of America, as Represented by the Secretary of Commerce National Institute of Standards and Technology · US
• University of Maryland · US

Inventors

• Fred Sharifi · Niskayuna, US
• Henry Lezec · Bethesda, US
• Myung-Gyu Kang · Gaithersburg, US

Key dates

• Filing date: Jan 7, 2016
• Grant date: Jan 31, 2017
• Expiry date: Jan 7, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/939
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.