Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices
US9558993B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2013 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Mar 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.