Patent · US Active

Semiconductor device

US9559055B2 · kind B2 · utility

0Cited by
3References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 22, 2015
Grant dateJan 31, 2017
Priority date
Expiry dateJan 22, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a fuse element that can be cut and removed by laser irradiation. The fuse element has a large width portion having a large sectional area to be irradiated with a laser spot, and two small width portions having a small sectional area connected to opposite sides of the large width portion. Penetration of moisture is suppressed even after cutting of the fuse element since the large width portion is removed by the laser irradiation and only the small width portions having the small sectional area remain as exposed cut surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.