Semiconductor device and method for manufacturing the same
US9559057B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2016 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Feb 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a gate interconnect, a second insulating layer, and a first electrode. The first semiconductor region includes a first region and a second region provided around the first region. The gate interconnect is provided on the second region. The gate interconnect includes a first portion and a second portion provided around the second portion. A thickness in the first direction of the second portion is thinner than a thickness in the first direction of the first portion. A length in the second direction of the gate interconnect is longer than a length in the third direction of the gate electrode. The first electrode contacts the gate interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.