Patent · US Active

Semiconductor device with non-isolated power transistor with integrated diode protection

US9559097B2 · kind B2 · utility

1Cited by

7References

18Claims

0Family size

Assignee

NXP USA, Inc. · US

Inventors

Patrice M. Parris · Phoenix, US
Hubert M. Bode · Haar, DE
Weize Chen · Phoenix, US
Richard J. DeSouza · Chandler, US
Andreas Laudenbach · Alzenau, DE
Kurt U. Neugebauer · Vaterstetten, DE

Key dates

Filing date	Oct 6, 2014
Grant date	Jan 31, 2017
Priority date	—
Expiry date	Oct 6, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.