Photodetector and image sensor including the same
US9559133B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Sep 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/77
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.