Semiconductor device manufacturing method, and photoelectric conversion device
US9559136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Feb 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.