Semiconductor device and method of manufacture therefor

US9559198B2 · kind B2 · utility

Assignee

• NXP USA, Inc. · US

Inventors

• Evgueniy Stefanov · Ramonville-Saint-Agne, FR
• Edouard D. de Frésart · Tempe, US
• Philippe Dupuy · Toulouse, FR

Key dates

• Filing date: Aug 27, 2013
• Grant date: Jan 31, 2017
• Expiry date: Aug 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A semiconductor device comprises a first contact layer, a first drift layer adjacent the first contact layer, a buried body layer adjacent the first drift layer and a second contact layer. A first vertical trench and a second vertical trench are provided, the first and second vertical trenches being spaced with respect to each other and extending from the second contact layer to substantially beyond the buried body layer. A second drift layer is also provided and sandwiched between the buried body layer and the second contact layer.