Field effect transistors and methods of forming same

US9559209B2 · kind B2 · utility

Assignees

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW
• National Taiwan University · TW

Inventors

• Chee-Wee Liu · Taipei, TW
• Samuel C. Pan · Hsinchu, TW
• I-Hsieh Wong · Hsinchu, TW
• Hung-Yu Yeh · Taichung, TW

Key dates

• Filing date: Jun 15, 2015
• Grant date: Jan 31, 2017
• Expiry date: Jun 15, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6741

Abstract

Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.