Thin film transistor and method of manufacturing the same
US9559210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jul 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.