Optoelectric devices comprising hybrid metamorphic buffer layers
US9559237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2013 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Sep 4, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlyGazIn(1-y-z)As and a second portion comprising GaxIn(1-x)P. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.