Photovoltaic device containing an N-type dopant source
US9559247B2 · kind B2 · utility
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6References
12Claims
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Key dates
| Filing date | Sep 14, 2011 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.