Nitride underlayer and fabrication method thereof
US9559261B2 · kind B2 · utility
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Key dates
| Filing date | Jun 14, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jun 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.