Light emitting diode module structure and manufacturing method thereof
US9559277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Mar 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light emitting diode module structural and a manufacturing method thereof are disclosed. The manufacturing method includes the steps as follows. A base and a light emitting diode die are provided. The light emitting diode die may include a first semiconductor layer and a second semiconductor layer. The light emitting diode die is disposed on the base. A buffer layer is formed to cover the light emitting diode die. A first opening and a second opening are formed on the first semiconductor layer and the second semiconductor layer, respectively. The second opening exposes the second semiconductor layer by penetrating the first semiconductor layer. A conductive pattern layer is formed on the buffer layer, and is electrically connected with the first semiconductor layer and the second semiconductor layer via the first opening and the second opening, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.