Low noise amplifier
US9559644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Nov 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/1063
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Circuitry includes a floating-body main field-effect transistor (FET) device, a body-contacted cascode FET device, and biasing circuitry coupled to the floating-body main FET device and the body-contacted cascode FET device. The floating-body main FET device includes a gate contact, a drain contact, and a source contact. The body-contacted cascode FET device includes a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device. The biasing circuitry is coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.