Semiconductor device, power control device and electronic system
US9559687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Aug 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/4903
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In order to reduce the cost and the like of a power control device including a semiconductor device such as a driver IC, as well as an electronic system, the driver IC includes a high side driver, a level shift circuit, first and second transistors, and a comparator circuit. The first transistor is formed in a termination area. The second transistor is formed in the termination region and is driven by a first power supply voltage. The comparator circuit is formed in a first region to drive the first transistor to be ON when the voltage of a sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage. The second transistor is a depression type transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.