Patent · US Active

Optical semiconductor device and method of producing the same

US9563100B2 · kind B2 · utility

1Cited by
5References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 23, 2015
Grant dateFeb 7, 2017
Priority date
Expiry dateJul 23, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2201/12
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optical semiconductor device including: a substrate having a principal surface; first and second optical waveguides disposed on the principal surface of the substrate, the first and second optical waveguides extending in a first direction, the second optical waveguide being arranged adjacent to the first optical waveguide in a second direction intersecting with the first direction; first and second signal electrodes disposed on the first and second optical waveguides; a resistor disposed on the principal surface, the resistor being arranged between the first optical waveguide and the second optical waveguide, the resistor being electrically connected to the first signal electrode and the second signal electrode; a resin layer disposed on the principal surface, top surfaces of the first and second signal electrodes, and the resistor; and a capacitor disposed on the resin layer, the capacitor being electrically connected to the resistor through an opening of the resin layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.