Patent · US Active

Low power radiation hardened memory cell

US9564208B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

Dolphin Integration · FR

Inventors

Oron Chertkow · Ashdod, IL
Ariel Pescovsky · Kfar Sava, IL

Key dates

Filing date	Sep 30, 2015
Grant date	Feb 7, 2017
Priority date	—
Expiry date	Sep 30, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/789
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention concerns a memory cell having: first and second cross-coupled gated inverters (102, 104), each including first and second inputs (IN1, IN2) and an output (OUT) and being adapted to couple its output to a first logic level only when the first and second inputs both receive the inverse of the first logic level; a first cut-off circuit (106) coupling the second input (IN2) of the first gated inverter (102) to the first input (IN1) of the first gated inverter (102); and a second cut-off circuit (108) coupling the second input (IN2) of the second gated inverter (104) to the first input (IN1) of the second gated inverter (104).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.