Method of forming thin film of semiconductor device
US9564286B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 14, 2014 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Dec 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.