Method of manufacturing semiconductor device and method of maintaining deposition apparatus
US9564316B2 · kind B2 · utility
1Cited by
41References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.