Method of manufacturing semiconductor devices
US9564343B2 · kind B2 · utility
4Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2016 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a process gas including an etching source gas into the chamber. The removal process is performed in a pulse type in which a first period and a second period are repeated a plurality of times. The etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period. A temperature of the inside of the chamber remains at 100° C. or more during the removal process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.