Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
US9564531B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 22, 2011 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Feb 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.