Doping an absorber layer of a photovoltaic device via diffusion from a window layer
US9564543B2 · kind B2 · utility
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Key dates
| Filing date | Nov 18, 2014 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Nov 18, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
Abstract
Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).
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