Germainium pin photodiode for integration into a CMOS or BICMOS technology

US9564549B2 · kind B2 · utility

Assignee

• IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK · DE

Inventors

• Dieter Knoll · Frankfurt (Oder), DE
• Stefan Lischke · Gebesee, DE
• Lars Zimmermann · Berlin, DE
• Yuji Yamamoto · Toyota, JP
• Andreas Trusch · Frankfurt (Oder), DE

Key dates

• Filing date: Sep 19, 2013
• Grant date: Feb 7, 2017
• Expiry date: Sep 19, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.