Silicon sputtering target with special surface treatment and good particle performance and methods of making the same
US9566618B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2012 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Nov 7, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.