Composition of, and method for forming, a semiconductor structure with multiple insulator coatings
US9567514B2 · kind B2 · utility
3Cited by
1References
11Claims
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Key dates
| Filing date | May 13, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/952
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.