Method and apparatus for depositing atomic layers on a substrate
US9567671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2012 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jul 30, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.