High reliability non-volatile static random access memory devices, methods and systems
US9570152B1 · kind B1 · utility
1Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2014 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Oct 13, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/39
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a storage element coupled to a first data node and a second data node, a first programmable nonvolatile element and a second programmable nonvolatile element, a first switch element and a second switch element. The first switch element is configured to couple the first programmable nonvolatile element to the first data node during a first read mode of the memory cell. The second switch element is configured to couple the second programmable nonvolatile element to the second data node during the first read mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.