Controlled crystallization to grow large grain organometal halide perovskite thin film
US9570240B1 · kind B1 · utility
5Cited by
2References
23Claims
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Key dates
| Filing date | Aug 4, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.