Preparation method of graphene nanoribbon on h-BN

US9570294B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Haomin Wang · Shanghai, CN
• Li He · Nanhu, CN
• Lingxiu Chen · Shanghai, CN
• Hong Xie · Singapore, SG
• Huishan Wang · Shanghai, CN
• Shujie Tang · Shanghai, CN
• Lei Li · Zhengzhou, CN
• Daoli Zhang · Shanghai, CN
• Xiaoming Xie · Jing County, CN
• Mianheng Jiang · Shanghai, CN

Key dates

• Filing date: Jul 20, 2015
• Grant date: Feb 14, 2017
• Expiry date: Jul 20, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01B2204/06
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.