Method for forming isolation member in trench of semiconductor substrate
US9570338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | May 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an isolation member in a trench of a substrate may include the following steps: performing a first deposition process to form a first isolation material set, which is at least partially positioned in the trench; partially removing the first isolation material set, such that a remaining portion of the first isolation material set remains in the trench; after the first isolation material set has been partially removed, performing a fluorine-reduction process on at least the remaining portion of the first isolation material set; after the fluorine-reduction process, performing a second deposition process to form a second isolation material set, which is at least partially positioned in the trench, wherein the second isolation material set includes the remaining portion of the first isolation material set; and processing the second isolation material set for forming the isolation member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.