Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure

US9570442B1 · kind B1 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Yanxiang Liu · San Diego, US
• Jun Yuan · San Diego, US

Key dates

• Filing date: Apr 20, 2016
• Grant date: Feb 14, 2017
• Expiry date: Apr 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

Aspects for applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure are disclosed. In one aspect, a FinFET-based circuit is provided. The FinFET-based circuit includes a semiconductor substrate and a Fin formed from the semiconductor substrate. The FinFET-based circuit also includes first and second FinFETs, each corresponding to the Fin. The FinFET-based circuit also includes a gate region disposed between the first FinFET and the second FinFET. An SDB isolation structure is formed in the Fin between the first FinFET and the second FinFET. The self-aligned SDB isolation structure is self-aligned with the gate region and electrically isolates the first FinFET and the second FinFET. The self-aligned SDB isolation structure applies stress to a first channel corresponding to the first FinFET and to a second channel corresponding to the second FinFET.