Semiconductor device, solid-state imaging device and electronic apparatus

US9570499B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventors

• Taku Umebayashi · Tokyo, JP
• Keiji Tatani · Yokohama, JP
• Hajime Inoue · Yokohama, JP
• Ryuichi Kanamura · Tokyo, JP

Key dates

• Filing date: Mar 31, 2016
• Grant date: Feb 14, 2017
• Expiry date: Mar 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.