Bipolar transistor
US9570546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Sep 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a bipolar transistor and a method of making the same. A power amplifier including a bipolar transistor. The bipolar transistor includes a collector including a laterally extending drift region. The also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.